| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which permits microfabrication. <P>SOLUTION: The semiconductor memory device is equipped with word lines which connect a memory cell commonly, a low decoder 50 for selecting the word line, and a word line driving circuit 60 provided with a first driving circuit 61-0 to 61-m for giving a driving voltage to the word lines. The first driving circuit 61-0 to 61-m is provided with commonly connected first to third gate electrodes 81, 82, 92; a first drain region 85 formed between the first electrode 81 and the second electrode 82 while being connected to the word lines; a first source region 89 formed so as to pinch the first gate electrode 81 and the second gate electrode 82, while being connected to a driving voltage line WDRV, a second drain region 90 whose circumference is surrounded by the third gate electrode 92, while being connected to the word lines; and a second source region 89 contacted with the first source region 89 and surrounds the circumference of the third gate electrode 92, while being connected to the driving voltage line WDRV. <P>COPYRIGHT: (C)2007,JPO&INPIT |
