| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bonded structure which makes the productivity high by uniformly depositing a plating metal for bonding chips. <P>SOLUTION: A wafer 2 having a plurality of first chips 4 each having cathodes 19a, 19b, and anodes 20a, 20b disposed near them and a wafer 3 having a plurality of second chips 5 each having cathodes 34a, 34b, are bonded to form a bonded structure. With the chips 4, 5 dipped in an electrolytic plating solution, a current is flowed between the first cathodes 19a, 34a and the anode 20a, and between the cathodes 19b, 34b and the anode 20b to form a bond 23 in bloc with a deposited plating metal to form bonded structures, respectively. <P>COPYRIGHT: (C)2007,JPO&INPIT |
