Method for filling shallow isolation trenches and other recesses during the formation of a semiconductor device and electronic systems including the semiconductor device

摘要

A method for filling a shallow isolation trench comprises partially filling the trench with a first material, then filling the trench the rest of the way with a second material. For the first material, a substance which flows more easily into narrow, deep trenches is selected, while for the second material, a substance which provides good electrical isolation is selected. In one embodiment, the first material may comprise silicon nitride or polysilicon and the second material may comprise high density plasma oxide (HDP). A trench filled using an embodiment of the inventive method is also described.