发明名称 READ-ONLY MEMORY USING LINEAR PASSIVE ELEMENTS
摘要 A read-only memory (ROM) is disclosed that uses the presence or absence of linear passive electrical elements, such as resistors or capacitors, to encode zeros and ones, permitting a large-area ROM to be fabricated, possibly on a flexible substrate. The ROM includes a substrate, a plurality of row conductors insulated from each other and at least partially layered on a portion of the substrate; a plurality of column conductors insulated from each other and from the row conductors and at least partially layered above or below a portion of the plurality of row conductors, a plurality of amplifiers electrically connected to the column conductors, and at least one linear passive element attached between the row conductors and the column conductors. An amplifier connected to a column conductor has an input impedance much lower than the combined parallel impedance of the linear passive elements connected to that column, thus comprising a virtual ground, and is operable to output a first logical state when one of the linear passive elements is electrically connected between one of the row conductors and one of the column conductors, and operable to output a second local state when said one of the linear passive elements is absent between one of the row conductors and one of the column conductors. The resistive or capacitive arrays can be made into low-cost imagers if the resistors/capacitors are sensitive to electromagnetic radiation or mechanical pressure.
申请公布号 US2007211511(A1) 申请公布日期 2007.09.13
申请号 US20070678109 申请日期 2007.02.23
申请人 SARNOFF CORPORATION 发明人 KANE MICHAEL G.;FIRESTER ARTHUR HERBERT;GU GONG
分类号 G11C17/00 主分类号 G11C17/00
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