METHOD AND APPARATUS FOR IMPROVING SYMMETRY OF A LAYER DEPOSITED ON A SEMICONDUCTOR SUBSTRATE

摘要

A method for forming a layer on a semiconductor substrate (68) is provided. A semiconductor substrate having a central axis (70) may be positioned a first distance from a first target and a second distance from a second target. The second target may have at least first and second portions on opposing sides of the central axis of the semiconductor substrate. The first and second targets may be exposed to a processing gas. First and second biases may be respectively applied to the first and second targets such that ions in the processing gas bombard the first and second targets and deposition particles are ejected from the first and second targets onto the semiconductor substrate.