| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory cell that can be rewritten without applying a high voltage between a source region and a drain region. <P>SOLUTION: A part of a floating gate 15a formed on a control gate region 9a via a silicon oxide film 11 is extended on a tunnel oxide film 13b on a control gate region 9b. A part of a floating gate 15b formed on the control gate region 9b via the silicon oxide film 11 is extended on a tunnel oxide film 13a on the control gate region 9a. When applying a high voltage to the control gate region 9a and a low voltage to the control gate region 9b, electrons are injected into the floating gate 15a from a part extended on the control gate region 9b via the tunnel oxide film 13b and electrons are drawn out from a part extended on the control gate region 9a via the tunnel oxide film 13a in the floating gate 15b. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
