SCHOTTKY JUNCTION SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To control the height of Schottky barrier to be a desired level to minimize electric power loss without causing an n factor to increase. SOLUTION: A Schottky junction semiconductor device comprises a Schottky electrode that is made of molybdenum and is formed on a surface of n-type 4H-SiC epitaxial layer formed on an n-type 4H-SiC single-crystal substrate; an ohmic electrode formed on the back of the 4H-SiC single-crystal substrate, that is thermally processed so as to serve as an ohmic electrode; an alloy layer that is formed at an interface between the 4H-SiC epitaxial layer and the Schottky electrode by causing alloying reaction at the interface by 600 to 900°C thermal processing. The n factor is≤1.05 and the height of the Schottky barrier is in the range of 1.2 to 1.27 eV. COPYRIGHT: (C)2007,JPO&INPIT