发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device includes a first interlayer insulating film, a second interlayer insulating film formed on the first interlayer insulating film, a plug having a lower portion surrounded by the first interlayer insulating film and an upper portion projecting from the first interlayer insulating film and surrounded by the second interlayer insulating film, a wire formed in the second interlayer insulating film, and having a connected portion that is connected to the plug and a non-connected portion that is not connected to the plug, and a stopper insulating film formed in a region between the first interlayer insulating film and the non-connected portion of the wire and between the second interlayer insulating film and the upper portion of the plug.
申请公布号 US2007210406(A1) 申请公布日期 2007.09.13
申请号 US20070715963 申请日期 2007.03.09
申请人 HIROTA JUN;SHINOMIYA HIDEO 发明人 HIROTA JUN;SHINOMIYA HIDEO
分类号 H01L29/00;H01L21/44 主分类号 H01L29/00
代理机构 代理人
主权项
地址