| 摘要 |
<p>A thin film transistor is provided to prevent a protrusion part from being formed on the surface of a semiconductor layer in a crystallization process by forming an organic layer on an amorphous silicon layer before the amorphous silicon layer is crystallized. An amorphous silicon layer(320) is formed on a substrate(300). An organic layer(330) is formed on the amorphous silicon layer. Laser is irradiated to the surface of the organic layer so that the amorphous silicon layer is crystallized to form a polycrystalline silicon layer. After ultraviolet light is irradiated to the surface of the organic layer, a cleaning process using deionized water or alcohol is performed to remove a part or all of the organic layer.</p> |
