| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce the capacitance of a pad electrode, and improve the adhesive strength of a connective terminal to the pad electrode when forming the connective terminal on an upper pad layer in a semiconductor device. <P>SOLUTION: The semiconductor device has a lower pad layer (20) provided on a semiconductor substrate (10); an insulating layer (30) separated from the periphery of the lower pad layer (20) and provided to form a space having a recess on the surface of the region separated from the lower pad layer; and an upper pad layer (40) which accommodates the lower pad layer (20) and the space, and is so formed as to extend on the insulating layer (30), and further, has an area larger than the one of the lower pad layer (20). <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
