发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
Provided is a semiconductor device formed to an SOI substrate including a MOS transistor in which a parasitic MOS transistor is suppressed. The semiconductor device formed on the SOI substrate by employing a LOCOS process is structured such that a part of a a polysilicon layer to becomes a gate electrode includes: a first conductivity type polysilicon region corresponding to a region of the silicon active layer which has a constant thickness and is to become a channel; and second conductivity type polysilicon regions corresponding to LOCOS isolation edges in each of which a thickness of the silicon active layer decreases.
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申请公布号 |
US2007210382(A1) |
申请公布日期 |
2007.09.13 |
申请号 |
US20070703258 |
申请日期 |
2007.02.07 |
申请人 |
YOSHINO HIDEO;HASEGAWA HISASHI |
发明人 |
YOSHINO HIDEO;HASEGAWA HISASHI |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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