| 摘要 |
The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer based on doped Si or doped GaP and a III/V semiconductor arranged on said carrier layer, with the composition Gaxlny-NaAsbPc Sbd, where x = 70-100 mol, y = 0-30 mol %, a = 0.5-15 mol %, b = 67.5 99.5 mol %, c = 0 32.0 mol %, and d = 0-15 mol %. According to the invention, x and y always add up to 100 mol %, and a, b, c and d always add up to 100 mol %. The ratio of the sums of x and y to a, b, c and d is essentially equal to 1:1. The invention also relates to a method for the production of said semiconductor structure, and to the use thereof for producing light-emitting diodes and laser diodes, or modulator and detector structures that are monolithically integrated into integrated circuits based on Si or GaP technology. |
