| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystallization method of a semiconductor film capable of suppressing in-plane fluctuation in the quality of the semiconductor film. SOLUTION: In the crystallization method of the semiconductor film, the semiconductor film 506 formed on a substrate 510 is irradiated with a first laser beam 503 which is incident on a bottom surface 510a of a substrate 510 and by a second laser beam 504 which is incident on the bottom surface 510a of the substrate 510 at an angle opposite that of the first laser beam 503 and oscillated by an oscillator differing from that of the first laser beam 503. Thus, part of the semiconductor film 506 is melted, and a portion of the semiconductor film 506 being melted is moved while the positions of irradiation of the first and the second laser beams 503, 504 and are being scanned approximately along the direction of slant for the first laser beam 503 or the second laser beam 504, thus crystallizing the semiconductor film 506. COPYRIGHT: (C)2007,JPO&INPIT
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