| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface treatment method of a compound semiconductor substrate which reduces a concentration of an impurity of surface of the substrate composed of a compound semiconductor to reduce a concentration of impurity of a layer formed on the substrate, to provide a compound semiconductor manufacturing method, to provide a compound semiconductor substrate, and to provide a semiconductor wafer. SOLUTION: The surface treatment method of a compound semiconductor substrate includes a substrate preparing process (S10) and a first cleaning process (S20). In the substrate preparing process (S10), a substrate composed of a compound semiconductor is prepared which contains indium of 5 mass%. In the first cleaning process (S20), the substrate is cleaned with a cleaning time as 3 secs to 60 secs, using a cleaning liquid where pH is -1 to 3 and an oxidation reduction potential E (mV) meets a relational expression of -0.08333x+0.750≤E≤-0.833x+1.333, where the value of pH is x. COPYRIGHT: (C)2007,JPO&INPIT
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