发明名称 |
ZWISCHENSCHICHT ZWISCHEN TITANNITRID UND HIGH DENSITY PLASMA OXID |
摘要 |
<p>A method for reducing die loss in a semiconductor fabrication process which employs titanium nitride and HDP oxide is provided. In the fabrication of multilevel interconnect structures, there is a propensity for defect formation in a process in which titanium nitride and HDP oxide layers are in contact along the edge of a semiconductor substrate. A dielectric interlayer (310) is provided which improves the interfacial properties between titanium nitride (360) and HDP oxide (320) and thereby reduces defects caused by delamination at the titanium nitride/HDP oxide interface. <IMAGE></p> |
申请公布号 |
DE69933235(T2) |
申请公布日期 |
2007.09.13 |
申请号 |
DE1999633235T |
申请日期 |
1999.05.27 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
WOOTEN, L.;CHRISTIAN, W.;SPIKES, E.;EVANS, L.;HOSSAIN, Z. |
分类号 |
H01L23/522;H01L23/532;H01L21/3205;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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