| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a driving apparatus for a self-arc-extinguishing type semiconductor device in which a power source utilization rate can be improved, a short-circuiting current in a field effect transistor in an output stage is prevented, and a switching speed of the self-arc-extinguishing type semiconductor device to be driven can be accelerated. <P>SOLUTION: An output signal of a photocoupler insulating circuit 2 is current-amplified by a first complementary type emitter follower circuit 21 and given to a complementary type base grounding circuit 22. From positive-pole side and negative-pole side collector load resistors R5, R6 connected to collectors C3, C4 of second PNP-type and second-NPN type bipolar transistors Q3, Q4 of the complementary type base grounding circuit 22, signals are current-amplified by third and fourth complementary type emitter follower circuits 31, 32, respectively, and given to P-channel and N-channel field effect transistors M1, M2 to which drains D1, D2 are connected, respectively. <P>COPYRIGHT: (C)2007,JPO&INPIT |
