| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of stably forming a fine pattern which is 50 nm or less by minimizing nonuniformity generated at the time of CMP in the step of forming the fine pattern. SOLUTION: The invention comprises the steps of: forming an etching mask patten by depositing a first hard mask, a first pad layer, and a second pad layer on a layer to be etched (21); forming a spacer made of a material which is the same as that of the first pad layer on both side walls of the etching mask pattern; forming a second hard mask made of a material which is different from that of the first hard mask and the same as that of the second pad layer until a space between the etching mask patterns is filled; planarizing the second hard mask until the first pad layer is exposed; removing the first pad layer and the spacer; and etching the layer to be etched using the remained first hard mask (22A) and the second hard mask (27B) as etching barriers. COPYRIGHT: (C)2007,JPO&INPIT
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