| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a boosting circuit, including a structure which prevents reduction in a load drive capability after boosting start, while suppressing reduction in power voltage, which is caused, when charging into a capacitor is executed at once, at boosting start and accompanying effects on other circuits. SOLUTION: In the booster circuit, wherein a plurality of boosting capacitors and a plurality of diodes or MOS transistors are connected in series, a circuit for limiting electric charges to be supplied to the boosting capacitors within a time frame, set in advance, is provided, thereby suppressing excessive fluctuations of the power supply voltage at the boosting start. COPYRIGHT: (C)2007,JPO&INPIT
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