发明名称 A METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER
摘要 The fabrication of an epitaxial layer (6) consists of: (a) implanting some atomic species into a support substrate (1) to define a fragile zone delimiting a thin support layer (13) from the rest (11) of the substrate; (b) transferring a thin nucleation layer (23) onto this thin support layer; (c) detaching the rest of the substrate along the fragile zone but keeping the thin support layer in contact with the rest of the substrate; (d) growing by epitaxy the epitaxial layer on the nucleation layer; (e) separating the rest of the substrate from the thin support layer.
申请公布号 EP1660702(B1) 申请公布日期 2007.09.12
申请号 EP20040740858 申请日期 2004.07.07
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 LETERTRE, FABRICE;FAURE, BRUCE
分类号 C30B25/02;C30B25/18;C30B33/00;H01L21/762 主分类号 C30B25/02
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