Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof,申请号EP20020425088-传众专利搜索

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发明名称	Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
摘要
申请公布号	EP1339103(B1)	申请公布日期	2007.09.12
申请号	EP20020425088	申请日期	2002.02.20
申请人	STMICROELECTRONICS S.R.L.;OVONYX, INC.	发明人	CASAGRANDE, GIULIO;BEZ, ROBERTO;PELLIZZER, FABIO
分类号	H01L23/522;H01L23/528;H01L27/24;H01L45/00	主分类号	H01L23/522
代理机构		代理人
主权项
地址

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