发明名称 |
GROUP III NITRIDE COMPOUND SEMICONDUCTOR DEVICE |
摘要 |
A titanium layer and a titanium nitride layer are successively laminated on a substrate and a group III nitride compound semiconductor layer is further formed thereon. When the titanium layer is removed in the condition that a sufficient film thickness is given to the titanium nitride layer, a device having the titanium nitride layer as a substrate is obtained. |
申请公布号 |
EP1301947(B1) |
申请公布日期 |
2007.09.12 |
申请号 |
EP20010984278 |
申请日期 |
2001.07.18 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
SHIBATA, NAOKI;SENDA, MASANOBU |
分类号 |
H01L33/10;H01L21/20;H01L21/203;H01L21/306;H01L31/10;H01L33/12;H01L33/32 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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