| 摘要 |
PROBLEM TO BE SOLVED: To suppress the generation of a break, craze, crack and the like in a semiconductor wafer caused by a multiwire saw to a minimum level, to raise the yield of the manufacture of the wafer, and at the same time also to lessen a break, craze, crack and the like caused by the process of the wafer itself in a step subsequent to a slicing of a block. SOLUTION: The semiconductor wafer is formed by a method where a semiconductor crystal ingot is cut in a prescribed size of a block. After that, the surface of the block is polished and the block is sliced by the multiwire saw after the polishing. The multitude of unevennesses existing on the upper and lower surfaces and the peripheral edges of the wafer are set in 2.5μm or lower in the display of a roughness Rmax used in accordance with the so-called JIS. |
