发明名称 APPARATUS FOR DEPOSITING METAL LAYER
摘要 A metal film-depositing apparatus that reduces the sheet resist of the metal film by forming a temperature gradient within a chamber, thereby increasing the grain size of a metal film is provided. An apparatus for depositing a metal film comprises: a chamber(10) providing a space for a metal film depositing process; a target(20) positioned in an upper part within the chamber and made from a metal material to be deposited; a chuck(30) which is formed in a lower part within the chamber oppositely to the target, on which a wafer(100) is loaded, and in which circulating cooling water is filled; and a heating means(50) which is formed on an upper inner wall of the chamber and spaced apart from the chuck in a predetermined distance to heat the chamber. The apparatus further comprises: a cooling water supply pipe(40) communicating with the chuck and supplying cooling water into the chuck; and a cooling water discharge pipe(41) communicating with the chuck and discharging cooling water in the chuck to the outside so that the cooling water is circulated within the chuck. The heating means consists of a heating wire or lamps formed on an inner wall surface of the chamber and spaced apart from the chuck in a predetermined distance.
申请公布号 KR20070091929(A) 申请公布日期 2007.09.12
申请号 KR20060021735 申请日期 2006.03.08
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JAE WOON
分类号 C23C14/34 主分类号 C23C14/34
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