发明名称 |
Light-detecting device and manufacturing method thereof |
摘要 |
<p>A light-detecting device, comprising: a semiconductor substrate 101 that is composed of silicon as a base material, and contains carbon at a predetermined concentration; and an epitaxial layer 102 that is formed on the semiconductor substrate 101 and composed of silicon as a base material, the epitaxial layer 102 including a light-detecting unit (mainly 104) a predetermined distance away from the semiconductor substrate 101, wherein the semiconductor substrate 101 is formed using a crystal growth method from melt obtained by melting a material containing silicon and a material containing carbon so that carbon is contained in the semiconductor substrate 101 at the predetermined concentration.</p> |
申请公布号 |
EP1833100(A2) |
申请公布日期 |
2007.09.12 |
申请号 |
EP20070250866 |
申请日期 |
2007.03.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HIRAI, JUN;SUZUKI, MASAKATSU;MURAKAMI, ICHIRO;HIROFUJI, YUICHI |
分类号 |
H01L31/18;H01L27/146;H01L31/0392 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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