FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF

摘要

A flash memory device and a programming method thereof are provided to automatically perform a reprogramming operation without external control, and automatically perform a reprogramming operation without reloading data and lowering operation speed in program failure. A memory cell array(110) is equipped with a plurality of memory cells arranged in each row/column. A row decoder circuit(120) selects one of the rows. A register block(150) stores data to be programmed to the memory cells of the selected row. A backup parameter storage(180) stores flag and address information indicating an on/off state of the reprogramming operation. A control block(130) controls the register block and the row decoder circuit in a programming operation. With the programming operation is failed, the control block determines the reprogramming operation according to the flag information stored in the backup parameter storage. When the flag information indicates the on-state of the reprogramming operation, the control block enables the data stored in the register block to be reprogrammed to the array without the external control.