发明名称 SUBSTRATE POLISHING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A substrate polishing method is provided to polish easily the same quantity as other substrates polished by using all carriers without adding a dummy substrate even if the substrate is polished by a part of the carriers by including a plurality of carriers with respect to one polishing pad and by pressing a substrate supported by corresponding carriers to the polishing pad. In polishing a substrate by using all carriers, an interval of polishing time necessary for polishing a predetermined quantity is obtained(S61). A correction coefficient is obtained which indicates a correlation between an interval of polishing time for polishing the substrate by using all carriers and an interval of polishing time for polishing the substrate by using only a part of the carriers. Based upon the obtained interval of polishing time, an interval of polishing time necessary for polishing a predetermined quantity is calculated in polishing the substrate by using only a part of the carriers(S62). Based upon a calculated interval of corresponding polishing time, the substrate is polished by using only a part of the carriers(S63). The correction coefficient can be a value corresponding to the number of carriers used in polishing the substrate.
申请公布号 KR20070092113(A) 申请公布日期 2007.09.12
申请号 KR20070021325 申请日期 2007.03.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KUNITAKE HIDEAKI;KANEMOTO MAMORU;IKENOUCHI KATSUYUKI;FUKUI YASUNORI
分类号 H01L21/304;B24B37/013 主分类号 H01L21/304
代理机构 代理人
主权项
地址