发明名称 APPARATUS FOR CONTROLLING VOLTAGE GENERATOR OF SEMICONDUCTOR MEMORY
摘要 An apparatus for controlling a voltage generator of a semiconductor memory is provided to control the operation of the voltage generator accurately according to a bank operation state even if a plurality of banks is enabled or disabled at the same time. A first counter(100) counts the number of memory banks to be enabled. A second counter(200) counts the number of memory banks to be precharged. An enable signal generation unit(300) generates an enable signal to enable a fixed number of voltage generators according to the output of the first counter. A disable signal generation unit(400) generates a disable signal to disable a fixed number of voltage generators according to the output of the second counter. A voltage generator control unit(500-0~500-m) controls a voltage generator connected to itself according to the enable signal, the disable signal and a bank operation command.
申请公布号 KR100757928(B1) 申请公布日期 2007.09.11
申请号 KR20060053454 申请日期 2006.06.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, HYANG HWA
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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