| 摘要 |
An ion implantation apparatus is provided to improve uniformity of an ion beam emitted from an ion source part by preventing reaction byproducts together with an ion beam emitted from a source chamber from being deposited in an ion beam hole. An ion source part(100) includes a source chamber(110), a gas supply unit(140), a filament(120) and a source aperture member(150). The gas supply unit supplies reaction gas to the source chamber. The filament emits thermal electrons to form an ion beam from the reaction gas, installed in the source chamber. The source aperture member is installed in the outer wall of the source chamber to emit the ion beam generated in the source chamber to the outside. The source aperture member prevents impurities from being deposited on the front surface of the inside of an ion beam hole penetrating the outer wall of the source chamber when an ion beam is emitted, inserted into the ion beam hole and including a body part and a hollow ion emitting part. The body part in which a hollow part is formed is inserted into the outer wall of the source chamber. The hollow ion emitting part supplies an emission path of an ion beam inserted into the hollow part of the body part and detachably coupled to the body part.
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