发明名称 |
Formation of low leakage thermally assisted radical nitrided dielectrics |
摘要 |
One or more aspects of the present invention relate to forming a dielectric suitable for use as a gate dielectric in a transistor. The gate dielectric is formed by a nitridation process that adds nitrogen to a semiconductor substrate.
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申请公布号 |
US7268088(B2) |
申请公布日期 |
2007.09.11 |
申请号 |
US20050197070 |
申请日期 |
2005.08.04 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
NIIMI HIROAKI |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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