发明名称 |
Dual gate oxide high-voltage semiconductor device and method for forming the same |
摘要 |
A dual gate oxide high-voltage semiconductor device and method for forming the same are provided. Specifically, a device formed according to the present invention includes a semiconductor substrate, a buried oxide layer formed over the substrate, a silicon layer formed over the buried oxide layer, and a top oxide layer formed over the silicon layer. Adjacent an edge of the top oxide layer, a dual gate oxide is formed. The dual gate oxide allows both specific-on-resistance and breakdown voltage of the device to be optimized.
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申请公布号 |
US7268046(B2) |
申请公布日期 |
2007.09.11 |
申请号 |
US20040003991 |
申请日期 |
2004.12.03 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
LETAVIC THEODORE J.;SIMPSON MARK R. |
分类号 |
H01L21/336;H01L29/786;H01L21/28;H01L21/8234;H01L29/423;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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