Thyristor-based memory and its method of operation

摘要

A semiconductor may contain a plurality of circuits each comprising at least one thyristor having a base region. The base region of at least one of the thyristors has a different doping profile than the others. When a bias circuit is used to bias the thyristors, the effect of biasing on the thyristors is found to be affected by the doping profile. In a specific embodiment, the doping concentration is higher near an electrode of the thyristor than near a supporting substrate. The different doping profiles can be achieved by using different ion implant energies.