| 摘要 |
A semiconductor integrated circuit device, having: a plurality of semiconductor elements formed in a central circuit area of a semiconductor chip; a plurality of insulating layers formed on the semiconductor chip; cavities for forming wiring layers of a multi-layer structure, each of the cavities in each wiring layer having a via hole and a wiring pattern trench; wiring layers of the multi-layer structure including a via conductor filled in the via hole and a wiring pattern filled in the wiring pattern trench; moisture-proof ring trenches of a multi-layer structure corresponding to the cavities for forming the wiring layers of the multi-layer structure, the moisture-proof ring trenches surrounding the circuit area in a loop-shape and formed through the insulating layers, a width of each of the moisture-proof ring trenches corresponding to a corresponding one or ones of the via holes being set smaller than a minimum diameter of the via holes; and a conductive moisture-proof ring filled in a corresponding one of the moisture-proof ring trenches. In etching via holes and a moisture-proof ring trench, it is possible to suppress the stopper film in the moisture-proof ring trench from being thinned and to minimize damages to the underlying wiring layer. |
