发明名称 Method of manufacturing photoreceiver
摘要 Disclosed is a method of manufacturing a photoreceiver, including sequentially laminating a buffer layer, a channel layer, a barrier layer, and a cap layer on a substrate; forming a mesa for HEMT and MSM PD by removing the buffer layer, the channel layer, the barrier layer, and the cap layer with the exception of a region corresponding to HEMT and MSM PD; forming a source electrode and a drain electrode of HEMT; removing the cap layer from a region corresponding to a gate electrode of HEMT and a Schottky electrode of MSM PD; forming the gate electrode of HEMT and the Schottky electrode of HEMT on the cap layer-removed region; and removing the cap layer, the barrier layer and the channel layer from a region corresponding to an optical waveguide, to expose the optical waveguide.
申请公布号 US7268027(B2) 申请公布日期 2007.09.11
申请号 US20050228471 申请日期 2005.09.15
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 KWON YOUNG SE;CHA JUNG HO
分类号 H01L21/84;H01L21/331;H01L21/338 主分类号 H01L21/84
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