Spiral inductor with electrically controllable resistivity of silicon substrate layer

摘要

A microelectronic device including, in one embodiment, a plurality of active devices located at least partially in a substrate, at least one dielectric layer located over the plurality of active devices, and an inductor located over the dielectric layer. At least one of the plurality of active devices is located within a columnar region having a cross-sectional shape substantially conforming to a perimeter of the inductor. The at least one of the plurality of active devices may be biased based on a desired Q factor of the inductor or and/or an operating frequency of the microelectronic device.