Power semiconductor device having an improved ruggedness

摘要

The power semiconductor of the invention consists of an n+ drain area; an n- epitaxial area; p- body and p+ body areas formed on top of the n- epitaxial area in a striped configuration; an n° epitaxial area formed on the n- epitaxial area and between the p- body and p+ body areas; a p-type edge area formed beneath the n° epitaxial area to connect with the two ends of the p+ body area; an n+ source area formed on two sides of the p- body area; gate dielectrics formed on top of the n+ body area, the p- body area, and the n° epitaxial area; and gate electrodes formed on the gate dielectrics. The p-type edge section of the power semiconductor of the invention consists of multiple sub-areas that prevent ruggedness current from concentrating on the p+ body area and thereby improve the ruggedness of the power semiconductor.