发明名称 |
High performance transistors with SiGe strain |
摘要 |
A preferred embodiment of the invention comprises a semiconductor device having stress in the source/drain channel. The device comprises a substrate having a lattice constant greater than or equal to silicon and a first layer on the substrate, wherein the first layer has a lattice constant greater than the substrate. Alternative embodiments include a second layer formed on the first layer. The second layer has a lattice constant less than the first layer. Preferably, the second layer underlies a gate electrode and at least a portion of a sidewall spacer. Still other embodiments include a recess for inducing stress in the source/drain channel.
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申请公布号 |
US7268362(B2) |
申请公布日期 |
2007.09.11 |
申请号 |
US20050066062 |
申请日期 |
2005.02.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHIH-HAO;WANG TA-WEI |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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