发明名称 Semiconductor device and method for fabricating the same
摘要 A semiconductor device includes: a conductive plug formed through an insulating film; a conductive oxygen barrier film formed on the insulating film so as to be electrically connected to the conductive plug and to cover the conductive plug; a lower electrode formed on the oxygen barrier film and connected to the oxygen barrier film; a capacitive insulating film formed on the lower electrode, following the lower electrode; and an upper electrode formed on the capacitive insulating film, following the capacitive insulating film. The capacitive insulating film has a bent portion that extends along the direction in which the conductive plug penetrates through the insulating film.
申请公布号 US7268036(B2) 申请公布日期 2007.09.11
申请号 US20040999977 申请日期 2004.12.01
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ITO TOYOJI;FUJII EIJI
分类号 H01L21/8242;H01L27/105;H01L21/02;H01L21/8246;H01L27/108 主分类号 H01L21/8242
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