发明名称 Multi-port memory device
摘要 A multi-port memory device that prevents degradation of efficiency of a global data drive by turning off the switches, which do not discharge a global data bus. The multi-port memory device includes a global data bus, a banks, each bank including a transmitter and a receiver; ports, each port including a transmitter and a receiver; switches that operate to selectively connect the receivers of the banks and ports to the global data bus; and a switch signal generator for generating a switch signal in response to data drive pulses inputted to the transmitters of the banks and the ports.
申请公布号 US7269041(B2) 申请公布日期 2007.09.11
申请号 US20050322508 申请日期 2005.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM KYUNG-WHAN;LEE JAE-JIN
分类号 G11C5/02 主分类号 G11C5/02
代理机构 代理人
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