| 摘要 |
A plasma etching apparatus including a detection window is provided to obtain stably a spectrum caused by variation of a wavelength of a plasma reaction material by including a detection window made of an etch-resistant material so that the detection window isn't easily etched by plasma. A plasma etch process is performed on a wafer in a chamber. A detection window(170) is inserted into an opening at one side of the chamber, transmitting the light emitted during the etch process to the outside of the chamber. A spectrum unit(180) inspects the wavelength of the light having transmitted the detection window to detect an end point. The detection window is made of a plasma-resistant material. A plurality of detection windows can be disposed at regular intervals along the circumference of the chamber.
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