发明名称 Vacuum processing operating method with wafers, substrates and/or semiconductors
摘要 This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dirty-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.
申请公布号 USRE39823(E1) 申请公布日期 2007.09.11
申请号 US20020060304 申请日期 2002.02.01
申请人 HITACHI, LTD. 发明人 KATO SHIGEKAZU;NISHIHATA KOUJI;TSUBONE TSUNEHIKO;ITOU ATSUSHI
分类号 F26B5/04;C23C14/56;H01L21/00;H01L21/677 主分类号 F26B5/04
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