CHARGE TRAP TYPE NON VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A charge trap-type non-volatile memory device and a method for manufacturing the same are provided to enhance the thermal stability of an ohmic layer contained in a gate structure of an MOS transistor. A charge trap structure is formed in a first region of a substrate(100), and is made of ternary metal oxide comprising a tunnel oxide layer pattern(114b), a charge trap layer pattern(116b) and aluminum. A first electrode pattern(122a) is formed on the charge trap structure. A gate oxide layer pattern and a polycrystal silicon layer pattern(106b) are formed on a second region of the substrate. An ohmic layer pattern(126a) is formed on the polycrystal silicon layer, and a second electrode pattern(122b) is formed on the ohmic layer pattern.