SINGLE ELECTRON TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A single electron transistor and its manufacturing method are provided to form quantum dots of a nanometer size at a desired position, thereby enabling the transistor to operate reliably with low consumption power. Source/drain layers(3) which are spaced apart from each other are formed on a semiconductor substrate(1). The source/drain layers are connected to each other by a nano wire channel. Oxidized channel region(6a,6b) are formed in the nano wire channel to isolate portions of the nano wire channels. A quantum dot(8) is enclosed by the oxidized channel region, and a portion of the nano wire channel is enclosed by a gate electrode(5).