| 摘要 |
An aluminum precursor for CVD(Chemical Vapor Deposition) and a preparation method thereof are provided to improve the deposition rate, resistance, purity, adhesive ability and reflectivity of aluminum thin film deposited to a silicon substrate by improving thermal stability of the aluminum precursor. An aluminum precursor for depositing high purity aluminum thin film on a substrate through chemical vapor deposition has the structure represented by the formula(1) of H3Al:Ln, wherein L is a Lewis base and an amine-based organic compounds represented by the formula(3), formula(4), formula(5) or formula(6) capable of supplying a noncovalent electron pair to the center of aluminum metal; n is 1; R^15 and R^16 are each independently C1-C5 alkyl group or perfluoroalkyl group; R^3, R^4, R^17 and R^18 are each independently hydrogen, C1-C5 alkyl group or perfluoroalkyl group; l is an integer from 1 to 4; k is an integer from 2 to 8; R^5, R^6, R^19, R^20, R^21 and R^22 are each independently hydrogen or C1-C5 alkyl group or perfluoroalkyl group; o is an integer from 1 to 4, i and j are each independently an integer from 2 to 8; R^23 and R^24 are each independently C1-C5 alkyl group or perfluoroalkyl group; R^7, R^8, R^25, R^26, R^27 and R^28 are each independently hydrogen or C1-C5 alkyl group or perfluoroalkyl group; X is oxygen, sulfur or nitrogen containing alkyl group or perfluoroalkyl group; p is an integer from 1 to 4; q and r are each independently an integer from 1 to 8; R^9, R^10, R^29, R^30, R^31, R^32, R^33, R^34, R^35 and R^36 are each independently hydrogen or C1-C5 alkyl group or perfluoroalkyl group; X' or X" are each independently oxygen, sulfur or nitrogen containing alkyl group or perfluoroalkyl group; s is an integer from 1 to 4; and t, u, v and w are each independently an integer from 1 to 8.
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