MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

摘要

Disclosed is a magnetoresistive element comprising a free layer (1), a fixed layer (3), a non-magnetic layer (2) interposed between the free layer (1) and the fixed layer (3), and two magnetic layers (20) arranged adjacent to one side of the free layer (1) which is opposite to the side on which the fixed layer (3) is. The free layer (1) comprises a first magnetic layer (11), a second magnetic layer (13), and a first non-magnetic layer (12) arranged between the first magnetic layer (11) and the second magnetic layer (13). The magnetization of the first magnetic layer (11) and the magnetization of the second magnetic layer (13) are antiferromagnetically coupled with each other. One of the two magnetic layers (20) is joined to the free layer (1) at one end in the longitudinal direction, while the other is joined to the free layer (1) at the other end in the longitudinal direction.