| 发明名称 |
TRANSISTOR DEVICE HAVING AN INCREASED THRESHOLD STABILITY WITHOUT DRIVE CURRENT DEGRADATION |
| 摘要 |
<p>By removing a portion of a halo region (206, 306) or by avoiding the formation of the halo region (206, 306) within the extension region (209A), which may be subsequently formed on the basis of a re-grown semiconductor material (218, 318), the threshold roll off behavior may be significantly improved, wherein an enhanced current drive capability may simultaneously be achieved.</p> |
| 申请公布号 |
WO2007100589(A1) |
申请公布日期 |
2007.09.07 |
| 申请号 |
WO2007US04544 |
申请日期 |
2007.02.20 |
| 申请人 |
ADVANCED MICRO DEVICES, INC.;WEI, ANDY;KAMMLER, THORSTEN;HOENTSCHEL, JAN;HORSTMANN, MANFRED |
发明人 |
WEI, ANDY;KAMMLER, THORSTEN;HOENTSCHEL, JAN;HORSTMANN, MANFRED |
| 分类号 |
H01L21/336;H01L29/08;H01L29/10 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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