| 摘要 |
<p>Generation of pattern failures is suppressed by peeling a modified layer formed on a resist surface after etching process and then effectively removing the peeled modified layer from the substrate prior to dissolving the resist in a reflow process. A substrate processing apparatus is provided with a first treatment solution supplying means (12) for supplying an etching solution for peeling a modified layer (207); a second treatment solution supplying means (13) for supplying a chemical for removing the unnecessary resist from a resist pattern (206); a third treatment solution supplying means (15) for supplying a rinse solution for removing the etching solution or the chemical supplied on the substrate; a drying means (11) for performing drying process to remove the rinse solution on the substrate from the substrate; and a control means (17) for controlling operation of the drying means (11). When the drying means (11) performs the drying process to remove the rinse solution used for the etching solution removal from the substrate, the control means (17) stops the drying process in a status where the rinse solution is left at least on the entire substrate.</p> |
