SILICON CARBIDE MOS FIELD EFFECT TRANSISTOR WITH BUILT-IN SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SUCH TRANSISTOR

摘要

A SiC vertical MOSFET is provided with a channel region, and a base region inverted into n-type by ion implantation, in a low concentration p-type deposition film. A cell having a built-in Shottky diode region is arranged at least on a part of an element cell constituting the SiC vertical MOSFET. A second n-type base layer is formed on the built-in Shottky diode region by converting (inverting) the p-type deposition layer into n-type by n-type impurity ion implantation from the surface. The second n-type base layer penetrates a second deficient section arranged on a high-concentration gate layer and a low-concentration p-type deposition layer formed thereon, and reaches an n-type drift layer of the second deficient section. A low on-resistance Shottky diode constituted with a source electrode connected by forming a Schottky barrier is incorporated in a surface exposed portion of the second n-type base layer.