SEMICONDUCTOR STORAGE DEVICE

摘要

Provided are a TTRAM which does not cause a trouble in data writing, and a TTRAM which performs dynamic voltage and frequency control, even when transistors are further microminiaturized. The potential statuses of a charge line (CL), a word line (WL) and a bit line (BL) are controlled so as to increase the potential of a body region (23b) by a leak current which flows from a connection node to the body region (23b), during a period until a storage transistor (STr) turns on, by activating both the word line (WL) and the bit line (BL) at the same time in a status where the storage transistor (STr) is turned off.