SPUTTERING APPARATUS AND FILM FORMING METHOD THEREOF

摘要

This invention relates to a sputtering apparatus and a film forming method thereof, more specifically, a technology for suitably controlling distribution characteristics of magnetron plasma in the vicinity of the surface of a target, based on magnetron discharge. In the method for forming films in the sputtering apparatus (100), a target (13) in a vacuum chamber (10) is sputtered by magnetron plasma using a discharge gas. In the method, a power supplied to the target (13) is kept constant, and a discharge gas quantity in the vacuum chamber (10) is adjusted, based on an index indicating the distribution characteristics of the magnetron plasma.