发明名称 STACKABLE MEMORY DEVICE AND ORGANIC TRANSISTOR STRUCTURE
摘要 In the present electronic structure (60), a first electronic device (74) includes a first pair of electrodes (76, 82) and an active layer (80) between the first pair of electrodes (76, 82). An organic transistor (100) is made up of organic material (88), a source (90), a drain (92), and a gate (96), one of the first pair of electrodes (76, 82) being connected to one of the source and drain (90, 92) of the organic transistor (100), A second electronic device (110) includes a second pair of electrodes (112, 118) and an active layer (116) between the second pair of electrodes (112, 118), one of the second pair of electrodes (112, 118) being in contact with an insulating body (94) adjacent the organic transistor (100).
申请公布号 WO2007005871(A3) 申请公布日期 2007.09.07
申请号 WO2006US26043 申请日期 2006.06.30
申请人 SPANSION LLC;PANGRLE, SUZETTE, K.;SOKOLIK, IGOR;KRIEGER, JURI 发明人 PANGRLE, SUZETTE, K.;SOKOLIK, IGOR;KRIEGER, JURI
分类号 G11C11/404;H01L27/28 主分类号 G11C11/404
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